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A wide bandgap semiconductor material typified by GaN (gallium nitride) is representative of the third generation semiconductor materials developed after Si and GaAs.
And its related alloy materials have the characteristics of high melting point, stable chemical properties, wide band gap, direct band gap, etc., and have a wide range of applications in UV-blue-green optoelectronic devices.
Since the breakthrough of GaN-based LED material growth and device manufacturing technology in the 1990s, semiconductor lighting has rapidly developed into an emerging industry, and is said to be the most important advance in the history of human lighting since Edison invented incandescent lamps. . In recent years, LED white light technology has made rapid progress. At present, the luminous efficiency of mass-produced LED lamps generally exceeds the above, exceeding the luminous efficacy of fluorescent lamps.
The melting point and saturated vapor pressure of the GaN material are high, and it is difficult to prepare a large-sized GaN crystal by a usual method of growing a single crystal. Therefore, the preparation of materials currently uses MOCVD, or HVPE and other crystal growth techniques away from equilibrium, and epitaxy on heterogeneous crystal substrate materials. Among these three methods, MOCVD (metal-organic chemical vapor) technology has high purity of growth materials, good quality of epitaxial thin film crystals, fast growth rate, precise controllability, suitable for large-scale production, etc. Based on LED research and mass production of mainstream epitaxial growth technology.
This paper mainly discusses the technical progress of epitaxial growth of GaN-based LEDs in recent years from the perspective of industrial mass production, including the development of MOCVD epitaxial equipment and epitaxial processes, and the development direction and challenges of epitaxial growth of GaN-based technologies.
Progress in MOCVD epitaxy
1. Development of MOCVD equipment
LED lighting should replace the traditional lighting method, and enter the daily life of people on a large scale, provided that the cost performance of the product exceeds that of other light source competitors. At this stage, GaN-based research and development are closely focused on two directions: (1) improving the electro-optical conversion efficiency of LED devices, especially at high current densities; and (2) maintaining high conversion efficiency of devices. Reduce the manufacturing cost of LED devices.
From a technical point of view, MOCVD epitaxial equipment and processes are at the core of the entire LED chip production, accounting for more than half of the entire LED chip manufacturing cost in terms of equipment investment and production cost. As shown in Figure 1, the main factors affecting the manufacturing cost of epitaxy include production efficiency, product yield and material consumption.
In the past 20 years, in addition to contributing to the optoelectronic performance of LED chips, the continuous development of MOCVD equipment is mainly reflected in the reduction of the production cost of epitaxy, including the following aspects:
1.1 Large-scale MOCVD growth chamber
The large-scale growth chamber of MOCVD equipment can improve the productivity of single furnace epitaxy, improve production efficiency and utilization efficiency of source materials, and significantly reduce the production cost of each epitaxial wafer. Figure 2 shows the development trend of the number of epitaxial wafers and the epitaxial cost of each epitaxial growth of MOCVD equipment over time. It can be seen from the figure that in the past 20 years, MOCVD single furnace growth epitaxy The number of pieces has gone through a process of increasing the number from single to multiple.
In the 1990s, MOCVD was mainly used for scientific research and small-scale production. The number of 2" epitaxial wafers grown per heat was less than 10. After 2000, with the expansion of the market, the LED industry began to enter the market. Scale production stage. Based on the urgent need to reduce production costs, Mar.2013 BEST LED PRUDUCTS 19 in a short period of 10 years, the single furnace capacity of epitaxial equipment quickly increased from several pieces / furnace to more than 50 pieces / furnace, The production cost of each epitaxial wafer has a tendency to decline linearly during this period.
By amplifying the scale effect of the reaction chamber, only the cost of consumables and spare parts is considered, and the cost per epitaxial wafer can be reduced to less than one-fifth of that of the single-chip microcomputer.
Unfinished , please refer to the March issue of Gaogong LED 's " LED Good Products" magazine.
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