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According Reuters in French research team IEMN formed on a Si substrate epitaxial GaN substrate to provide a device Allos Germany and the result of the measurement display, ALLOS novel Si substrate epitaxial GaN substrate breakdown voltage exceeding 1400 V.
The research team at IEMN in France fabricated and measured devices on two different Si-based GaN epitaxial wafers supplied by Allos, Germany. An epitaxial wafer is a sample of Allos's latest design for 1200V applications. On this epitaxial wafer, IMEN achieves a vertical breakdown voltage of over 1400V and a horizontal breakdown voltage of 1600V. Another epitaxial wafer is Allos's proven product for 600V applications. Test results show that both horizontal and vertical breakdown voltages exceed 1200V.
The above two epitaxial wafer products of ALLOS are not doped with C. C doping is a commonly used method for Si-based GaN epitaxial wafer manufacturers. The disadvantage of this method is that it has a negative impact on crystal quality and dynamic switching characteristics.
The latest epitaxial wafer for 1200V is from the ongoing internal development project of ALLOS. Its special characteristics are derived from ALLOS's unique strain control and high-quality crystal structure, supplemented by other measures to further suppress leakage current and improve breakdown voltage. This is achieved without sacrificing other basic properties such as crystal quality and epitaxial sheet curvature. Epitaxial growth was carried out in a standard Aixtron G5 MOCVD reaction chamber.
“The existing results show that we have reached a horizontal 1.7 MV/cm and a vertical 2 MV/cm level. We also have a plan to achieve further improvements at the epitaxial level. Now it is time for the industry with the 1200 V product line. Partners have built strong partnerships,†said ALLOS CEO Burkhard Slishkaka. “Because we are a pure epitaxial wafer technology provider and do not have our own device manufacturing business, we are looking to work closely with experienced power electronics companies to leverage their silicon-based GaN 1200 V applications. Opportunity. With our technology, silicon-based GaN has the potential to compete with silicon carbide performance at a fraction of the cost of wafers."
Editor: Yan Zhixiang
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