Mitsubishi has developed a green laser GaN substrate cost reduction of 90%

According to the Nihon Keizai Shimbun, Mitsubishi Ch emi cal Corp. and Shuji Nakamura, the father of blue LED, have successfully produced gallium nitride (GaN) crystals by liquid deposition. According to the report, the substrate cut from the above crystal is only 10% cheaper than the existing vapor deposition gallium nitride crystal. It is expected to be trial-produced in January 2011 and mass production will begin in 2012.

Mitsubishi produces a gallium nitride crystal about 2 inches in diameter by liquid deposition. The substrate cut from it can be used to produce LEDs, which consume only one-third of the power of sapphire substrate LEDs. The gallium nitride substrate produced by liquid deposition can also be used to produce green lasers, providing a more natural color for rear projection televisions.

Sumitomo Electric Industries announced on November 24 that it has successfully developed semi-polar and non-be polar gallium nitride substrates that can be used for native (direct) green lasers up to 2 inches in diameter. Improve the performance of green lasers and white LEDs. Sumitomo announced in July 2009 that it has developed a native green laser with a wavelength of 531 nm that can be applied to laser TVs and portable laser projectors.

Mitsubishi Electric Corp. is the world's most active electronics manufacturer for laser TV. Mitsubishi Digital Electronics America, Inc. (MDEA) began selling 3D LaserVue lasers in the US as early as 2007.

Mitsubishi Electric announced on November 11 that the high-brightness red laser diode (LD) suitable for use in the Pico Projector will be available from November 18, 2010. Mitsubishi high-brightness red laser diode "ML501P73" has a wavelength of 638 nm and a power output of 1W. It is the highest power output among the 638 nm band LDs in the world; it is suitable for use in pico projectors or other high-brightness reds. Portable display system for light sources.

Japan's LED giant Nichia Corporation announced on July 7 that it has successfully developed a green GaN-based laser diode based on GaN, which will begin in August this year. Sample delivery. The direct-emitting green laser produced by GaN wafer and chip process can not only achieve hundreds of millions of annual output, but also be filial, lighter and cheaper than the current green laser on the market. The mass production of direct green lasers will help Matte partner MicroVision launch a laser projection module built into mobile phones.

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