![<?echo $_SERVER['SERVER_NAME'];?>](/template/twentyseventeen/skin/images/header.jpg)
Compared with traditional substrate materials, gallium nitride has superior properties such as large band gap, high breakdown voltage, high thermal conductivity, high electron saturation drift velocity, strong radiation resistance and good chemical stability. The material system with the highest efficiency of photoelectric conversion and photoelectric conversion. The performance advantages of a gallium nitride substrate relative to a substrate such as sapphire, silicon carbide, etc. are obvious, but the biggest problem is that the price is too high.
In terms of thick film substrate products, the products have different specifications of 10 to 50 microns, and commonly used are 20 to 30 microns. The dislocation density is on the order of 107 cm -3 and can be divided into two types, n-type doping and semi-insulation, according to different technical parameters. N-type doping is mainly used in optoelectronic devices such as LEDs, and semi-insulation is mainly used in power electronics and microwave devices.
Self-supporting gallium nitride (GaN) substrate: Dislocation density is on the order of 105cm-3, divided into three according to different technical parameters, namely n-type doping, semi-insulating and non-doping. N-type gallium nitride is mainly used in LEDs and lasers; semi-insulation is used in high-power microwave devices or high-current high-voltage switches. Non-doped, ie high-purity gallium nitride, is widely used on detectors, requiring the lower the electron concentration of the material, the better. Nano-doped GaN products, X-ray (002) half-width is 50 seconds, (102) half-width is about 80 seconds, and the electron mobility of bulk materials exceeds 1500cmV-1s-1, which is in the forefront of the world. Level. Navy is one of the few units in the world that can produce and sell gallium nitride self-supporting wafers.
GaN self-supporting substrate grown by HVPE method
HVPE is mainly metal gallium, hydrogen chloride, ammonia gas, metal gallium and hydrogen chloride react to form gallium chloride, and gallium chloride becomes gas after 200 ° C, which is used as raw material, and then reacts with ammonia gas on the surface of the substrate. Becomes gallium nitride. The HVPE production method has a very high chemical saturation on the surface. Therefore, its growth rate is very fast, 50 to 100 times faster than MOCVD, and it can grow 200 to 300 microns per hour, which can be used in a short time. Turning this material into high quality gallium nitride is a feature of it.
In the next 5 years, the price of GaN will drop 10 to 20 times, and 4 to 6 inches will enter the market.
The homoepitaxial epitaxy on the gallium nitride substrate and the heteroepitaxial epitaxy on the sapphire substrate are technically superior, and the heteroepitaxial defect density is two to three orders of magnitude higher than that of the homoepitaxial gallium nitride. Gallium nitride has the characteristics of being electrically conductive, and can be made into a vertical structure chip, so that the utilization area of ​​the epitaxial wafer is 1.5 times higher than that of sapphire. After the vertical structure is formed, the current density on the gallium nitride can be high, and it is desirable that the chip on one gallium nitride substrate can reach the chip on ten sapphire substrates. Sorra in the United States and NGK in Japan have begun to develop such chips and have made important breakthroughs to achieve the same brightness. LEDs fabricated on gallium nitride substrates consume less than half the energy of conventional chips.
With the mass production and price reduction of gallium nitride and the continuous development of LED epitaxial technology, when the current density of the chip is increased to 5 to 10 times, the advantage of using gallium nitride on LEDs is much more obvious than that of sapphire. It is expected that the price of gallium nitride substrates for LEDs can be reduced by 10 to 20 times in the next five years, and gallium nitride substrates will have significant advantages in unit lumen prices.
Future GaN substrates do not completely replace sapphire substrates
The sapphire substrate will become the mainstream of the LED substrate market for a long time in the future based on its unique advantages and the possibility of significantly reducing costs in the future through mass production. Nowadays, different substrate technologies are not fully developed in the field of subdivision. In the future, the large-scale development of gallium nitride will not completely replace sapphire.
Sapphire substrates have their advantages when they are not critical in terms of brightness and the like. In the future, general-purpose lighting and the requirements for luminous intensity, light stability, and light stability are very high, and GaN products have its advantages. In particular, LEDs are used as new light sources for projectors, projection lamps, automotive lamps, flash lamps, etc., and gallium nitride substrates have their absolute advantages.
The demand for LED LCD TVs is very large, and each LED TV requires 900 LEDs. However, with the development of technology, the actual LED TV is only need less than 100, so the demand is almost ten times smaller.
In terms of thick film substrate products, the products have different specifications of 10 to 50 microns, and commonly used are 20 to 30 microns. The dislocation density is on the order of 107 cm -3 and can be divided into two types, n-type doping and semi-insulation, according to different technical parameters. N-type doping is mainly used in optoelectronic devices such as LEDs, and semi-insulation is mainly used in power electronics and microwave devices.
Self-supporting gallium nitride (GaN) substrate: Dislocation density is on the order of 105cm-3, divided into three according to different technical parameters, namely n-type doping, semi-insulating and non-doping. N-type gallium nitride is mainly used in LEDs and lasers; semi-insulation is used in high-power microwave devices or high-current high-voltage switches. Non-doped, ie high-purity gallium nitride, is widely used on detectors, requiring the lower the electron concentration of the material, the better. Nano-doped GaN products, X-ray (002) half-width is 50 seconds, (102) half-width is about 80 seconds, and the electron mobility of bulk materials exceeds 1500cmV-1s-1, which is in the forefront of the world. Level. Navy is one of the few units in the world that can produce and sell gallium nitride self-supporting wafers.
GaN self-supporting substrate grown by HVPE method
HVPE is mainly metal gallium, hydrogen chloride, ammonia gas, metal gallium and hydrogen chloride react to form gallium chloride, and gallium chloride becomes gas after 200 ° C, which is used as raw material, and then reacts with ammonia gas on the surface of the substrate. Becomes gallium nitride. The HVPE production method has a very high chemical saturation on the surface. Therefore, its growth rate is very fast, 50 to 100 times faster than MOCVD, and it can grow 200 to 300 microns per hour, which can be used in a short time. Turning this material into high quality gallium nitride is a feature of it.
In the next 5 years, the price of GaN will drop 10 to 20 times, and 4 to 6 inches will enter the market.
The homoepitaxial epitaxy on the gallium nitride substrate and the heteroepitaxial epitaxy on the sapphire substrate are technically superior, and the heteroepitaxial defect density is two to three orders of magnitude higher than that of the homoepitaxial gallium nitride. Gallium nitride has the characteristics of being electrically conductive, and can be made into a vertical structure chip, so that the utilization area of ​​the epitaxial wafer is 1.5 times higher than that of sapphire. After the vertical structure is formed, the current density on the gallium nitride can be high, and it is desirable that the chip on one gallium nitride substrate can reach the chip on ten sapphire substrates. Sorra in the United States and NGK in Japan have begun to develop such chips and have made important breakthroughs to achieve the same brightness. LEDs fabricated on gallium nitride substrates consume less than half the energy of conventional chips.
With the mass production and price reduction of gallium nitride and the continuous development of LED epitaxial technology, when the current density of the chip is increased to 5 to 10 times, the advantage of using gallium nitride on LEDs is much more obvious than that of sapphire. It is expected that the price of gallium nitride substrates for LEDs can be reduced by 10 to 20 times in the next five years, and gallium nitride substrates will have significant advantages in unit lumen prices.
Future GaN substrates do not completely replace sapphire substrates
The sapphire substrate will become the mainstream of the LED substrate market for a long time in the future based on its unique advantages and the possibility of significantly reducing costs in the future through mass production. Nowadays, different substrate technologies are not fully developed in the field of subdivision. In the future, the large-scale development of gallium nitride will not completely replace sapphire.
Sapphire substrates have their advantages when they are not critical in terms of brightness and the like. In the future, general-purpose lighting and the requirements for luminous intensity, light stability, and light stability are very high, and GaN products have its advantages. In particular, LEDs are used as new light sources for projectors, projection lamps, automotive lamps, flash lamps, etc., and gallium nitride substrates have their absolute advantages.
The demand for LED LCD TVs is very large, and each LED TV requires 900 LEDs. However, with the development of technology, the actual LED TV is only need less than 100, so the demand is almost ten times smaller.
we design and manufacture Actuator For Dual Axis Azimuth Tracking System, which is widely used for solar system.
U10 and U4 are heavy load Linear Actuator designed for industrial application, especially be used for solar tracking system & heliostat.
The Solar Tracker Linear Actuator is a heavy load linear actuator designed for industrial application, especially be used for solar racking system. U10 is a robust and powerful actuator, designed for heavy-duty applications in harsh environments like solar tracker. It features high load capability, long lifetime and low power consumption.
Actuator For Dual Axis Azimuth Tracking System
Electric Linear Actuator For Dual Axis Azimuth Tracking System,Linear Actuator For Dual Axis Azimuth Tracking System
TOMUU (DONGGUAN) ACTUATOR TECHNOLOGY CO., LTD. , http://www.tomuu.com